ION-SOURCE WITH PLASMA GENERATION BY MICROWAVES IN ELECTRON-CYCLOTRON RESONANCE

[11] MIYAMURA K, 1983, REACTIVE ION BEAM ET

[12] MURAY IJ, 1983, SEP P INT ION ENG C, P1545

[13] ROTHE R, 1982, THESIS TH KARLMARX S

[14] SAKUDO N, 1977, SEP P ION SOURC APPL, P33

[15] Schmidt S., 1983, Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt, V25, P906

[16] SIMONYI K, 1980, THEORETISCHE ELEKTRO

[17] PLASMA UNIFORMITY OF MICROWAVE ION SOURCES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1247 - 1251

[18] WALKOW B, 1983, THESIS TH KARLMARX S

[19] ION-BEAM SPUTTERING AND ITS APPLICATION FOR DEPOSITION OF SEMICONDUCTING FILMS [J]. THIN SOLID FILMS, 1972, 13 (02) : 359 - 366

[20] 1980, MIMTLA15 FIRM FIRM T

[11] MIYAMURA K, 1983, REACTIVE ION BEAM ET

[12] MURAY IJ, 1983, SEP P INT ION ENG C, P1545

[13] ROTHE R, 1982, THESIS TH KARLMARX S

[14] SAKUDO N, 1977, SEP P ION SOURC APPL, P33

[15] Schmidt S., 1983, Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt, V25, P906

[16] SIMONYI K, 1980, THEORETISCHE ELEKTRO

[17] PLASMA UNIFORMITY OF MICROWAVE ION SOURCES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1247 - 1251

[18] WALKOW B, 1983, THESIS TH KARLMARX S

[19] ION-BEAM SPUTTERING AND ITS APPLICATION FOR DEPOSITION OF SEMICONDUCTING FILMS [J]. THIN SOLID FILMS, 1972, 13 (02) : 359 - 366

[20] 1980, MIMTLA15 FIRM FIRM T