MAGNETORESISTANCE METHOD TO DETERMINE GAAS AND ALXGA1-XAS MOBILITIES IN ALXGA1-XAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES

被引：13

作者：

LOOK, DC

NORRIS, GB

KOPP, W

HENDERSON, T

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：267 / 269

页数：3

共 15 条

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ANDO, T .

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[8] CAPACITANCE-VOLTAGE CHARACTERISTICS IN MODULATION DOPED HETEROJUNCTION FETS [J].

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[9]

NORRIS GB, 1985, APPL PHYS LETT, V47

[10] TWO-DIMENSIONAL ELECTRONIC SYSTEMS FOR HIGH-SPEED DEVICE APPLICATIONS [J].

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