ELECTRONIC CONDUCTION IN THIN AMORPHOUS MOO3/SIO FILMS DEPOSITED BY COEVAPORATION

A study of the effects of changes in composition and temperature on the electrical properties of MoO3/SiO thin amorphous films is presented. The high-field conduction is probably due to the Poole-Frenkel effect as it is in simple SiO. At low temperature and low field the electron hopping process is dominant but conduction at higher temperatures is a contact-limited process. The decrease in conductivity with increasing concentration of SiO in MoO3 may be attributed to the increasing number of trapping centres introduced in MoO3/SiO films during the evaporation process. The increase in conductivity in MoO3/SiO films with increasing temperature is attributed to the increasing concentration and higher mobility of charge carriers. © 1990 Chapman and Hall Ltd.