HIGH-SPEED PLANAR-STRUCTURE INP INGAASP INGAAS AVALANCHE PHOTODIODE GROWN BY VPE

被引：27

作者：

SUGIMOTO, Y ^{[1
]}

TORIKAI, T ^{[1
]}

MAKITA, K ^{[1
]}

ISHIHARA, H ^{[1
]}

MINEMURA, K ^{[1
]}

TAGUCHI, K ^{[1
]}

IWAKAMI, T ^{[1
]}

机构：

[1] NEC CORP,C&C SYST RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 16期

关键词：

D O I：

10.1049/el:19840447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：653 / 654

页数：2

共 11 条

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[4]

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[5]

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[6] HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS [J].

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[7] SINGLE-LONGITUDINAL-MODE OPERATION OF DFB-DC-PBH LD UNDER GBIT/S MODULATION [J].

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ELECTRONICS LETTERS, 1984, 20 (06) :261-263

[8] INGAAS AVALANCHE PHOTO-DIODES FOR 1-MU-M WAVELENGTH REGION [J].

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ELECTRONICS LETTERS, 1983, 19 (14) :534-535

[9] INP-INGAASP PLANAR AVALANCHE PHOTO-DIODES WITH SELF-GUARD-RING EFFECT [J].

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[10]

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