FIELD DISTRIBUTION AND AVALANCHE BREAKDOWN OF TRENCH MOS CAPACITORS OPERATED IN DEEP DEPLETION

被引：4
作者：
BULUCEA, C [1 ]
KUMP, MR [1 ]
AMBERIADIS, K [1 ]
机构：
[1] TECHNOL MODELING ASSOCIATES,PALO ALTO,CA 94301
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期
关键词：
D O I：
10.1109/16.43676
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2521 / 2529
页数：9
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