EPD INVESTIGATION IN LEC-GROWN SILICON-DOPED GALLIUM-ARSENIDE

被引：10
作者：
FORNARI, R
PAORICI, C
ZANOTTI, L
机构：
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1983年 / 18卷 / 02期
关键词：
D O I：
10.1002/crat.2170180205
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：157 / 164
页数：8
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