ANALYSIS OF SB-IMPLANTED SILICON BY (P P) SCATTERING AND HALL MEASUREMENTS

被引：27

作者：

ERIKSSON, L

DAVIES, JA

DENHARTOG, J

MAYER, JW

MARSH, OJ

MARKARIOUS, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 10卷 / 11期

关键词：

D O I：

10.1063/1.1754830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：323 / +

页数：1

共 8 条

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[6]

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[8] OXYGEN-DEFECT COMPLEXES IN NEUTRON-IRRADIATED SILICON [J].

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