THE USE OF PULSED LASER IRRADIATION IN SILICON MOLECULAR-BEAM EPITAXY - A COMPARATIVE LOW-ENERGY ELECTRON-DIFFRACTION STUDY

被引：31

作者：

DEJONG, T ^{[1
]}

DOUMA, WAS ^{[1
]}

SMIT, L ^{[1
]}

KORABLEV, VV ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：888 / 898

页数：11

共 28 条

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[9] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE [J].

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