THE USE OF PULSED LASER IRRADIATION IN SILICON MOLECULAR-BEAM EPITAXY - A COMPARATIVE LOW-ENERGY ELECTRON-DIFFRACTION STUDY

被引：31

作者：

DEJONG, T ^{[1
]}

DOUMA, WAS ^{[1
]}

SMIT, L ^{[1
]}

KORABLEV, VV ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：888 / 898

页数：11

相关论文

共 28 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM
ABBINK, HC
BROUDY, RM
MCCARTHY, GP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &
[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646
[3] PATTERNED SILICON MOLECULAR-BEAM EPITAXY WITH SUB-MICRON LATERAL RESOLUTION
BEAN, JC
ROZGONYI, GA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 752 - 755
[4] BEAN JC, 1981, IMPURITY DOPING
[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[6] BUCKLING RECONSTRUCTION ON LASER-ANNEALED SI(111) SURFACES
CHABAL, YJ
ROWE, JE
ZWEMER, DA
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (09) : 600 - 603
[7] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION
CHERNOV, AA
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 55 - 76
[8] LASER PROCESSING OF UHV-DEPOSITED THIN SILICON FILMS
DEJONG, T
SMIT, L
KORABLEV, VV
TROMP, RM
SARIS, FW
[J]. APPLIED SURFACE SCIENCE, 1982, 10 (01) : 10 - 20
[9] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE
DEJONG, T
DOUMA, WAS
VANDERVEEN, JF
SARIS, FW
HAISMA, J
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1037 - 1039
[10] DUCHEMIN JP, 1980, J VAC SCI TECHNOL, V16, P1126