THE USE OF PULSED LASER IRRADIATION IN SILICON MOLECULAR-BEAM EPITAXY - A COMPARATIVE LOW-ENERGY ELECTRON-DIFFRACTION STUDY

被引:31
作者
DEJONG, T [1 ]
DOUMA, WAS [1 ]
SMIT, L [1 ]
KORABLEV, VV [1 ]
SARIS, FW [1 ]
机构
[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期
关键词
D O I
10.1116/1.582709
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:888 / 898
页数:11
相关论文
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