STUDIES ON METAL-OXIDE SEMICONDUCTOR ZnO AS A HYDROGEN GAS SENSOR

被引：0

作者：

Prajapati, C. S. ^{[1
]}

Sahay, P. P. ^{[1
]}

机构：

[1] Motilal Nehru Natl Inst Technol, Dept Phys, Allahabad 211004, Uttar Pradesh, India

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2011年 / 3卷 / 01期

关键词：

METAL-OXIDE SEMICONDUCTOR; ZINC OXIDE; HYDROGEN GAS SENSOR; STRUCTURAL PROPERTIES; ELECTRICAL PROPERTIES;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Metal-oxide semiconductor ZnO thin films were prepared on glass slides by spray pyrolysis technique at substrate temperature (410 +/- 10) degrees C. Zn(NO3)(2).6H(2)O was used as the precursor solution. The films thus prepared are undergone for structural and morphological studies using X-ray diffraction and scanning electron microscopy The films are found to be polycrystalline zinc oxide in nature, possessing hexagonal wurtzite crystal structure and nanocrystalline in grain size - 30-35 nm. The hydrogen sensing performance of the films has been investigated for various concentration of hydrogen in air at different operating temperatures in the range 200-400 degrees C. It is observed that the response is maximum (44.3 %) at the operating of temperature of 250 degrees C for 0.8 vol % concentration of hydrogen in air. A possible sensing mechanism for hydrogen has been proposed.

引用

页码：714 / 720

页数：7

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