EFFECTIVE CHARGE CARRIER LIFETIME IN SILICON P-I-N JUNCTION DETECTORS

被引:10
作者
COLEMAN, JA
SWARTZENDRUBER, LJ
机构
关键词
D O I
10.1109/TNS.1966.4324105
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:240 / +
页数:1
相关论文
共 7 条
[1]   RADIATION DAMAGE IN LITHIUM DRIFTED P-I-N JUNCTIONS [J].
COLEMAN, JA ;
RODGERS, JW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) :213-+
[2]   TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J].
HAYNES, JR ;
HORNBECK, JA .
PHYSICAL REVIEW, 1955, 100 (02) :606-615
[3]   TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J].
HORNBECK, JA ;
HAYNES, JR .
PHYSICAL REVIEW, 1955, 97 (02) :311-321
[4]   TRANSIENT RESPONSE OF A P-N JUNCTION [J].
LAX, B ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) :1148-1154
[5]  
MILLER GL, 1961, C P BELGRADE IAEA
[6]  
PREAMPLIFIER MODEL 1
[7]  
1961, P IRE, V49, P1292