DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE + ELECTRON-NUCLEAR DOUBLE RESONANCE OF SI-E CENTER

被引：706
作者：
WATKINS, GD
CORBETT, JW
机构：
来源：
PHYSICAL REVIEW | 1964年 / 134卷 / 5A期
关键词：
D O I：
10.1103/PhysRev.134.A1359
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：1359 / +
页数：1
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