NANOSCALE PATTERNING AND SELECTIVE CHEMISTRY OF SILICON SURFACES BY UHV-STM

被引：0
|
作者：
LYDING, JW
机构：
[1] UNIV ILLINOIS,BECKMAN INST,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1995年 / 209卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：147 / PHYS
相关论文
共 50 条
  • [1] Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM
    Albrecht, PM
    Lyding, JW
    2005 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES, 2005, : 49 - 52
  • [2] UHV-STM FOR CLEAVED SAMPLE
    TOKUMOTO, H
    MIKI, K
    OKAYAMA, S
    MURAKAMI, H
    WAKIYAMA, S
    ANDO, K
    JOURNAL OF ELECTRON MICROSCOPY, 1990, 39 (04): : 287 - 287
  • [3] Nano-fabrication on silicon at high temperature in a UHV-STM
    Iwatsuki, M.
    Kitamura, S.
    Sato, T.
    Sueyoshi, T.
    Nanotechnology, 1992, 3 (03) : 137 - 141
  • [4] Nanoscale patterning and selective chemistry of silicon surfaces by ultrahigh-vacuum scanning tunneling microscopy
    Lyding, JW
    Shen, TC
    Abeln, GC
    Wang, C
    Tucker, JR
    NANOTECHNOLOGY, 1996, 7 (02) : 128 - 133
  • [5] Development of UHV-STM/STS at 2 K
    Hattori, K
    Iimori, T
    Komori, K
    THIN SOLID FILMS, 1996, 281 : 644 - 646
  • [6] Development of UHV-STM/STS at 2 K
    Hattori, K.
    Iimori, T.
    Komori, K.
    Thin Solid Films, 1996, 281-282 (1-2): : 644 - 646
  • [7] 利用UHV-STM观察Si(100)表面
    张兆祥
    井藤浩志
    云南大学学报(自然科学版), 1992, (S1) : 102 - 104
  • [8] UHV-STM study on ion-assisted deposition
    Seki, T
    Matsuo, J
    Yamada, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 : 1007 - 1010
  • [9] 利用UHV-STM观察Si(100)表面
    张兆祥
    井藤浩志
    云南大学学报(自然科学版), 1992, (自然科学版) : 102 - 104
  • [10] WTe2 surfaces in UHV-STM image formation and analysis of point defect structures
    Crossley, JAA
    Sofield, CJ
    Myhra, S
    SURFACE SCIENCE, 1997, 380 (2-3) : 568 - 575
12345