IMPURITIES IN ION PLATED CHROMIUM FILMS

被引：3

作者：

HSIEH, JH ^{[1
]}

HOCHMAN, RF ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,SCH MAT ENGN,ATLANTA,GA 30332

来源：

SURFACE & COATINGS TECHNOLOGY | 1992年 / 54卷 / 1-3期

关键词：

D O I：

10.1016/0257-8972(92)90180-I

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Oxygen, carbon and argon concentrations in chromium films produced by triode ion plating were studied as a function of substrate bias and cathode current density (or ion flux). The results reveal the following. (1) Ion plating with low bias and high ion flux can produce films with low oxygen and carbon concentrations. (2) At high bias, the effect of energetic particle bombardment on decreasing oxygen and carbon concentrations is not as effective as in low bias ion plating. (3) The amount of argon entrapped in the films increases with the increase in bias voltage and bombarding particle flux. A qualitative model based on the theory of energetic particle bombardment is used to explain the results.

引用

页码：315 / 319

页数：5

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