NORMAL ELECTRIC-FIELD DEPENDENCE OF ELECTRON-MOBILITY IN MOS INVERSION LAYER

被引：11

作者：

SHIRAHATA, M

HAMAGUCHI, C

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 07期

关键词：

D O I：

10.1143/JJAP.25.1040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1040 / 1044

页数：5

共 18 条

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[8] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J].

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[9] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER [J].

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[10]

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