SILICON WHISKERS FOR MECHANICAL SENSORS

被引：11

作者：

VORONIN, V

MARYAMOVA, I

ZAGANYACH, Y

KARETNIKOVA, E

KUTRAKOV, A

机构：

[1] Polytechnical Institute, Department of Semiconductor Electronics, Lvov, 290646

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 30卷 / 1-2期

关键词：

D O I：

10.1016/0924-4247(92)80193-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some problems related to creating mechanical piezoresistive sensors based on silicon whiskers are considered. Physicochemical aspects of semiconductor whisker technology using the chemical vapour deposition (CVD) method are discussed. Theoretical and experimental investigations of the longitudinal piezoresistance in p-type Si <B> whiskers with impurity concentrations of 1 x 10(17)-3 x 10(19) cm-3 have been carried out in different temperature ranges. It is shown that strain gauges based on p-Si whiskers have extremely high mechanical strength and a wide operating temperature range from cryogenic temperatures to +400-degrees-C. Several types of pressure sensors for various applications, containing an original universal strain unit with Si whiskers, are described. Their advantages are small size and weight, high resonance frequency and the possibility of operating in temperature ranges from -269- +20-degrees-C to -60- +350-degrees-C under unfavourable conditions. Different kinds of sensors for medical investigations are also presented.

引用

页码：27 / 33

页数：7

共 15 条

[1]

BUDJAK YS, 1982, PHYS ELECTRONICS LVO, P3

[2]

GREENWOOD JC, 1983, J PHYS E, V4, P669

[3] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF HOLE MOBILITY AND RESISTIVITY IN BORON DOPED SILICON [J].

LI, SS .

SOLID-STATE ELECTRONICS, 1978, 21 (09) :1109-1117

[4]

Mar'yamova I. I., 1989, Pribory i Sistemy Upravleniya

[5]

MARYAMOVA II, 1983, PHYS ELECTRONICS LVO, P28

[6]

MARYAMOVA II, 1981, PRIB SYST UPRA, P25

[7]

MARYAMOVA II, 1979, 3 P SOV C WHISK NEW, P119

[8]

MARYAMOVA II, 1988, PHYS ELECTRONICS LVO, P106

[9]

MIDDELHOEK S, 1989, 12TH P ANN SCH SEM L

[10]

SHKLOVSKII BI, 1984, ELECTRONIC PROPERTIE

← 1 2 →