MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON (100) SI

被引：26

作者：

PARK, RM

MAR, HA

机构：

[1] 3M Canada Inc, Downsview, Ont, Can, 3M Canada Inc, Downsview, Ont, Can

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 08期

关键词：

D O I：

10.1063/1.96496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：529 / 531

页数：3

共 10 条

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[10] ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY - SUBSTRATE-TEMPERATURE EFFECT [J].

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