STUDIES ON ZNO/P-SI HETEROJUNCTIONS FABRICATED BY A MODIFIED CVD METHOD

被引：11

作者：

BASU, S

DUTTA, A

机构：

[1] Semiconductor Materials Preparation and Processing Laboratory, Indian Institute of Technology, Materials Science Centre, Kharagpur

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 136卷 / 01期

关键词：

D O I：

10.1002/pssa.2211360134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film ZnO (almost-equal-to 0.7 mum) is deposited on quartz and p-Si substrates by a modified CVD method. The optical and electrical properties of the film are studied. The ZnO/p-Si heterojunction is characterized by current-voltage and capacitance-voltage measurements using indium ohmic contacts to zinc oxide. The conduction band and valence band discontinuity values are calculated and a suitable band energy diagram of the heterojunction is constructed.

引用

页码：267 / 272

页数：6