STUDIES ON ZNO/P-SI HETEROJUNCTIONS FABRICATED BY A MODIFIED CVD METHOD

被引：11
作者：
BASU, S
DUTTA, A
机构：
[1] Semiconductor Materials Preparation and Processing Laboratory, Indian Institute of Technology, Materials Science Centre, Kharagpur
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 136卷 / 01期
关键词：
D O I：
10.1002/pssa.2211360134
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin film ZnO (almost-equal-to 0.7 mum) is deposited on quartz and p-Si substrates by a modified CVD method. The optical and electrical properties of the film are studied. The ZnO/p-Si heterojunction is characterized by current-voltage and capacitance-voltage measurements using indium ohmic contacts to zinc oxide. The conduction band and valence band discontinuity values are calculated and a suitable band energy diagram of the heterojunction is constructed.
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页码：267 / 272
页数：6
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