OPTICAL SPECTROSCOPY OF 1T-SNS2 SINGLE-CRYSTAL

The present paper discuss the characterization of the bandgap and midbandgap optical properties of a high quality 1T-SnS2 single crystals. These crystals were grown by chemical vapor transport method with predominantly low concentration of iodine. The optical properties were characterized by the following complementary measurements: transmission, photoluminescence (PL) (at various temperatures and excitation power), time resolved PL and PL decay processes. The results indicate that the luminescence events are associated with donor-acceptor recombination process of pairs with ensemble average of distances. Theoretical simulation of the luminescence decay process included comparison of a two- and three-dimensional recombination mechanisms. Chemical characterization in combination with the theoretical results support the possibility of an interaction among intralayer acceptors (metal vacancies) with van der Waals donors (intrinsic or extrinsic impurities).