MONOLITHICALLY INTEGRATED 2X2 INGAASP/INP LASER-AMPLIFIER GATE SWITCH ARRAYS

被引：25

作者：

JANSON, M ^{[1
]}

LUNDGREN, L ^{[1
]}

MORNER, AC ^{[1
]}

RASK, M ^{[1
]}

STOLTZ, B ^{[1
]}

GUSTAVSSON, M ^{[1
]}

THYLEN, L ^{[1
]}

机构：

[1] ERICSSON TELECOM AB,FIBRE OPT RES CTR,S-12625 STOCKHOLM,SWEDEN

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 08期

关键词：

OPTICAL SWITCHING; OPTICAL AMPLIFIERS; INTEGRATED OPTICS;

D O I：

10.1049/el:19920490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithically integrated 2 x 2 semiconductor laser amplifier gate switch arrays have been fabricated and evaluated. Net positive chip gain, high extinction ratio, and high electrical isolation between the integrated laser amplifiers are reported.

引用

页码：776 / 778

页数：3