MODELING OF THE HYSTERESIS OF FERROELECTRIC THIN-FILMS

被引：10
|
作者：
YOO, IK
DESU, SB
机构：
[1] Department of Materials Science and Engineering, College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 69卷 / 03期
关键词：
D O I：
10.1080/01418639408240121
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A polarization reversal mechanism is proposed for ferroelectric ceramics, which is controlled by nucleation, growth, merging and shrinkage of ferroelectric domains. These domain phenomena are described by the nature of Barkhausen jumps, the internal electric field, the dielectric relaxation times of the dipoles, and the ferroelectric-electrode interface state. A quantitative model is developed, based on the proposed polarization reversal mechanism, for simulating hysteresis properties of lead zirconate titanate thin films. The simulated hysteresis loops show excellent agreement with experimental results.
引用
收藏
页码：461 / 469
页数：9
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