THE STRUCTURE OF GEXSI1-X/SI STRAINED LAYER SUPERLATTICES AND HETEROSTRUCTURES

被引:0
|
作者
ZHANG, R [1 ]
ZHENG, YD [1 ]
JIANG, RL [1 ]
HU, LQ [1 ]
ZHONG, PX [1 ]
YU, SD [1 ]
LI, Q [1 ]
FENG, D [1 ]
CHEN, GX [1 ]
机构
[1] NANJING UNIV,SOLID STATE MICROSTRUCT LAB,NANJING 210008,PEOPLES R CHINA
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中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A series of GeSi/Si strained layer heterostructures grown by rapid radiant heating, very low pressure chemical vapor deposition (RRH/VLP-CVD) on a Si(100) substrate have been studied for the first time. The results of XPS and AES studies indicate that the epilayer is a pure GeSi alloy with a homogeneous composition and binding energy values are the same as those of bulk Si and Ge, respectively. The XRD spectra show that the epilayer is a high-quality single crystal with a lattice plane spacing different from that of the bulk GeSi alloy predicted by Vegard's law and from that measured from polycrystalline diffraction. This means that the epilayer is a strained film. The RRH/VLP-CVD method has been developed to grow Ge(x)Si1-x/Si superlattices. The results of XTEM, XRD and Raman measurements show a well-defined periodic structure with strain in both the alloy sublayers and the Si sublayers. This means a high-quality strained layer superlattice has been obtained.
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页码:356 / 360
页数:5
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