STOICHIOMETRIC DISTURBANCES IN COMPOUND SEMICONDUCTORS DUE TO ION-IMPLANTATION

被引：7
作者：
AVILA, RE
FUNG, CD
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期
关键词：
D O I：
10.1063/1.337247
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1602 / 1606
页数：5
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