STOICHIOMETRIC DISTURBANCES IN COMPOUND SEMICONDUCTORS DUE TO ION-IMPLANTATION

被引：7

作者：

AVILA, RE

FUNG, CD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1602 / 1606

页数：5

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