GROWTH KINETIC-STUDY IN GAAS MOLECULAR LAYER EPITAXY IN TMG/ASH3 SYSTEM

被引：73
作者：
NISHIZAWA, J [1 ]
KURABAYASHI, T [1 ]
机构：
[1] SEMICOND RES INST,SENDAI 980,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期
关键词：
This reaction was supported by the AES result of the deposited film. From these experiments of the photoexcitation in the vapor phase; we obtained the wavelength dependence as shown in table 1;
D O I：
10.1016/0022-0248(88)90513-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
16
引用
收藏
页码：98 / 107
页数：10
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