SOME EFFECTS OF CRYSTAL-GROWTH PARAMETERS ON MINORITY-CARRIER LIFETIME IN FLOAT-ZONED SILICON

被引：23

作者：

CISZEK, TF ^{[1
]}

WANG, TH ^{[1
]}

SCHUYLER, T ^{[1
]}

ROHATGI, A ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,ATLANTA,GA 30332

来源：

关键词：

D O I：

10.1149/1.2096590

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：230 / 234

页数：5

共 21 条

[1] ABAKUMOV VN, 1977, SOV PHYS SEMICOND+, V11, P766
[2] AUGER-RECOMBINATION IN SI
BECK, JD
CONRADT, R
[J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95
[3] CHIKAWA J, 1986, ELECTROCHEMICAL SOC, P1022
[4] A GRAPHICAL TREATMENT OF COMBINED EVAPORATION AND SEGREGATION CONTRIBUTIONS TO IMPURITY PROFILES FOR ZONE-REFINING IN VACUUM
CISZEK, TF
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (01) : 61 - 66
[5] CISZEK TF, 1973, ELECTROCHEMICAL SOC, P150
[6] IMPURITIES IN SILICON SOLAR-CELLS
DAVIS, JR
ROHATGI, A
HOPKINS, RH
BLAIS, PD
RAICHOUDHURY, P
MCCORMICK, JR
MOLLENKOPF, HC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 677 - 687
[7] DEKOCK AJR, 1973, ELECTROCHEMICAL SOC, P83
[8] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON
DZIEWIOR, J
SCHMID, W
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348
[9] CARRIER RECOMBINATION AND LIFETIME IN HIGHLY DOPED SILICON
FOSSUM, JG
MERTENS, RP
LEE, DS
NIJS, JF
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 569 - 576
[10] Green M. A., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P1405