SOME EFFECTS OF CRYSTAL-GROWTH PARAMETERS ON MINORITY-CARRIER LIFETIME IN FLOAT-ZONED SILICON

被引：23

作者：

CISZEK, TF ^{[1
]}

WANG, TH ^{[1
]}

SCHUYLER, T ^{[1
]}

ROHATGI, A ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,ATLANTA,GA 30332

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 01期

关键词：

D O I：

10.1149/1.2096590

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：230 / 234

页数：5

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