TRANSIENT RESPONSE OF INSULATED-GATE FIELD-EFFECT TRANSISTORS

[1] BORKAN H, 1963, RCA REV, V24, P153

[2] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[3] IHANTOLA HJK, 1963, ASD61133 STANF U TEC

[4] THEORY OF TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS IN PRESENCE OF TRAPPING [J]. PHYSICAL REVIEW, 1962, 126 (06): : 1980 - &

[5] EFFECT OF SURFACE TRAPS ON CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 267 - &

[6] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[7] WANLASS FM, 1963, P I SOLIDSTATE CIRCU, P32

[8] INTEGRATED CIRCUITS INCORPORATING THIN-FILM ACTIVE + PASSIVE ELEMENTS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1479 - &

[9] TFT - NEW THIN-FILM TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (06): : 1462 - &

[10] WEIMER PK, 1962, AD269929

[1] BORKAN H, 1963, RCA REV, V24, P153

[2] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[3] IHANTOLA HJK, 1963, ASD61133 STANF U TEC

[4] THEORY OF TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS IN PRESENCE OF TRAPPING [J]. PHYSICAL REVIEW, 1962, 126 (06): : 1980 - &

[5] EFFECT OF SURFACE TRAPS ON CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 267 - &

[6] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[7] WANLASS FM, 1963, P I SOLIDSTATE CIRCU, P32

[8] INTEGRATED CIRCUITS INCORPORATING THIN-FILM ACTIVE + PASSIVE ELEMENTS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1479 - &

[9] TFT - NEW THIN-FILM TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (06): : 1462 - &

[10] WEIMER PK, 1962, AD269929