CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE

被引：27

作者：

GEBHARDT, JJ

TANZILLI, RA

HARRIS, TA

机构：

[1] DIV SPACE,SPACE SCI LAB,PHILADELPHIA,PA 19101

[2] GE,DIV RE ENTRY & ENVIRONM SYST,PHILADELPHIA,PA 19101

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 10期

关键词：

D O I：

10.1149/1.2132642

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1578 / 1582

页数：5

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[4]

BILLY M, 1959, ANN CHIM PARIS, V4, P795

[5] PYROLYTIC SI3N4 [J].

GALASSO, F ;

KUNTZ, U ;

CROFT, WJ .

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[6]

GEBHARDT JJ, 1973, 4TH INT C CHEM VAP D, P460

[7] SYNTHESIS, CHARACTERIZATION, AND CONSOLIDATION OF SI3N4 OBTAINED FROM AMMONOLYSIS OF SICL4 [J].

MAZDIYASNI, KS ;

COOKE, CM .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (12) :628-633

[8] OXYGEN CONTENT OF ALPHA SILICON-NITRIDE [J].

PRIEST, HF ;

BURNS, FC ;

PRIEST, GL ;

SKAAR, EC .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (07) :395-395

[9]

ROSOLOWSKI JH, 1974, ARPA2698 ADV RES PRO

[10]

Wild S., 1992, SPEC CERAM, V5, P385

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