A TWO-DIMENSIONAL ANALYTICAL THRESHOLD VOLTAGE MODEL FOR MOSFETS WITH ARBITRARILY DOPED SUBSTRATES

被引：24
作者：
KENDALL, JD [1 ]
BOOTHROYD, AR [1 ]
机构：
[1] NO TELECOM ELECTR LTD,OTTAWA K1Y 4H7,ONTARIO,CANADA
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 07期
关键词：
D O I：
10.1109/EDL.1986.26416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：401 / 403
页数：3
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