A TWO-DIMENSIONAL ANALYTICAL THRESHOLD VOLTAGE MODEL FOR MOSFETS WITH ARBITRARILY DOPED SUBSTRATES

被引：24

作者：

KENDALL, JD ^{[1
]}

BOOTHROYD, AR ^{[1
]}

机构：

[1] NO TELECOM ELECTR LTD,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 07期

关键词：

D O I：

10.1109/EDL.1986.26416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：401 / 403

页数：3

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[1] KENDALL JD, UNPUB
[2] TWO-DIMENSIONAL ANALYTICAL MODELING OF THRESHOLD VOLTAGES OF SHORT-CHANNEL MOSFETS
POOLE, DR
KWONG, DL
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 443 - 446
[3] SHORT-CHANNEL MOST THRESHOLD VOLTAGE MODEL
RATNAKUMAR, KN
MEINDL, JD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) : 937 - 948
[4] MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER
SELBERHERR, S
SCHUTZ, A
POTZL, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1540 - 1550
[5] QUASI-2-DIMENSIONAL ANALYTICAL SOLUTION OF POISSON EQUATION IN ARBITRARILY DOPED SHORT-CHANNEL MOSFET
SKOTNICKI, T
[J]. ELECTRONICS LETTERS, 1983, 19 (19) : 797 - 798
[6] THRESHOLD VOLTAGE IN SHORT-CHANNEL MOS DEVICES
VISWANATHAN, CR
BURKEY, BC
LUBBERTS, G
TREDWELL, TJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 932 - 940