A NEW METHOD FOR MEASURING THE SATURATION VELOCITY OF SUBMICRON CMOS TRANSISTORS

A method is presented to extract the saturation velocity upsilon(sat) of charge carriers in the inversion channel of submicron length CMOS devices. The method is more reliable than those available from literature since series resistance effects are included in the formulary. For surface channel NMOS transistors, a saturation velocity of upsilon(sat) = 6.9(+/- 0.5) x 10(6) cm/S was measured while for surface (p-type poly-Si) and buried (n-type poly-Si) channel PMOS transistors upsilon(sat) = 4.5(+/- 0.5) x 10(6) and 6.0(+/- 0.5) x 10(6) Cm/s, respectively, was found.