SI(AS) RELATED PHOTOLUMINESCENCE EMISSIONS IN LOW-TEMPERATURE ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：1

作者：

SOUZA, PL ^{[1
]}

RAO, EVK ^{[1
]}

ALEXANDRE, F ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 04期

关键词：

D O I：

10.1063/1.351716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photoluminescence emission attributed to (Si(As)-(V)As) at 1.77 eV at 77 K has been previously observed in annealed Si-doped Al0.3Ga0.7As layers grown by molecular beam epitaxy at 680-degrees-C. An emission with similar characteristics has now been observed in as-grown samples fabricated at lower temperatures. New results render the attribution of the deep PL emission to the pair (Si(III)-Si(As)) more likely. The possibility of a heat treatment producing the same defect as a low-temperature molecular beam epitaxy growth is also discussed.

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页码：1498 / 1501

页数：4

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