LOW-STRESS GOLD ELECTROPLATING FOR X-RAY MASKS

被引：18

作者：

CHU, W

SCHATTENBURG, ML

SMITH, HI

机构：

[1] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

D O I：

10.1016/0167-9317(92)90046-T

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a method for obtaining electrodeposited Au films of uniform thickness, low stress, and fine grain using a safe, commercially-available plating solution. In our electroplating set-up, the plating geometry is fixed by inserting an annular spacer ring between the Pt anode and the sample to be plated. Plating using this electrode configuration and a stagnant solution yields uniform-thickness Au films with a simple linear relationship between film stress and plating current density. Such films are well-suited as mask absorbers for x-ray nanolithography (sub-100-nm feature sizes).

引用

页码：223 / 226

页数：4

共 7 条

[1]

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[2]

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[3]

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[4]

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[6]

Glang, Holmwood, Rosenfeld, Rev. Sci. Instrum., 36, (1965)

[7]

Chiu, Acosta, Electrodeposition of low stress gold for x-ray mask, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 8, (1990)

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