LATERAL INSULATED-GATE BIPOLAR-TRANSISTOR (LIGBT) WITH A SEGMENTED ANODE STRUCTURE

被引：36
作者：
SIN, JKO
MUKHERJEE, S
机构：
[1] Philips Laboratories, North American Philips Corporation, Briarcliff Manor
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 02期
关键词：
D O I：
10.1109/55.75699
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using segments of p+ and n+ diffusions along the device width. This segmented design of the anode structure results in higher switching speed and reduction in device size. Depending on the value of the specific ON resistance, experimental results show that the segmented anode LIGBT has from 20% to 250% reduction in turn-off time as compared to the shorted anode LIGBT.
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页码：45 / 47
页数：3
相关论文
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Gough P. A., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P218
[2]  
Jayaraman R., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P258
[3]  
MUKHERJEE S, 1987, IEDM TECH DIG, P778
[4]  
MUKHERJEE S, 1987, ELECTROCHEM SOC SPRI, P158
[5]  
Sin J. K. O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P222
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