SURFACE-STRUCTURES AND CONDUCTANCE AT EPITAXIAL GROWTHS OF AG AND AU ON THE SI(111) SURFACE

被引：86
|
作者：
HASEGAWA, S
INO, S
机构：
[1] Department of Physics, Faculty of Science, University of Tokyo, Hongo, Bunkyo-ku
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 08期
关键词：
D O I：
10.1103/PhysRevLett.68.1192
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In situ measurements of surface conductance, combined with simultaneous observations of reflection high-energy electron diffraction, clearly demonstrated strong dependence of the conductance on substrate-surface structures and epitaxial growth styles at early stages of Ag and Au depositions on Si(111) surface at room temperature. The conductance showed a large change with a small amount of deposition (< 0.1 monolayer) on the substrate of a metal-induced superstructure (square-root 3 x square-root 3-Ag or 5 x 2-Au), while it scarcely changed for a clean 7 x 7 substrate. The results are discussed in terms of the Fermi-level pinning and space-charge layers.
引用
收藏
页码：1192 / 1195
页数：4
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