共 17 条
- [1] THEORY OF PHOTOCAPACITANCE IN AMORPHOUS-SILICON MIS STRUCTURES [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (02): : 151 - 161
- [2] THEORY OF FIELD EFFECT IN AMORPHOUS COVALENT SEMICONDUCTOR FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 102 - &
- [3] CONCERNING THE DEPENDENCE OF PHOTOCONDUCTIVITY ON PHOTOGENERATION RATE IN INTRINSIC AMORPHOUS-SEMICONDUCTORS [J]. SOLAR ENERGY MATERIALS, 1982, 6 (02): : 175 - 182
- [4] EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 407 - 434
- [5] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165
- [6] A SIMPLE SCHEME FOR EVALUATING FIELD-EFFECT DATA [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (02): : K139 - K143
- [8] THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H [J]. PHYSICA B & C, 1983, 117 (MAR): : 883 - 885
- [9] FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4570 - 4578