共 17 条
[1]
THEORY OF PHOTOCAPACITANCE IN AMORPHOUS-SILICON MIS STRUCTURES
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1982, 46 (02)
:151-161
[2]
THEORY OF FIELD EFFECT IN AMORPHOUS COVALENT SEMICONDUCTOR FILMS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1971, 8 (01)
:102-&
[3]
CONCERNING THE DEPENDENCE OF PHOTOCONDUCTIVITY ON PHOTOGENERATION RATE IN INTRINSIC AMORPHOUS-SEMICONDUCTORS
[J].
SOLAR ENERGY MATERIALS,
1982, 6 (02)
:175-182
[4]
EFFECT OF ANNEALING AND LIGHT EXPOSURE ON THE FIELD-EFFECT DENSITY OF STATES IN GLOW-DISCHARGE A-SI-H
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1982, 45 (04)
:407-434
[5]
ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1980, 42 (01)
:149-165
[6]
A SIMPLE SCHEME FOR EVALUATING FIELD-EFFECT DATA
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1980, 100 (02)
:K139-K143
[8]
THE EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN A-SI-H
[J].
PHYSICA B & C,
1983, 117 (MAR)
:883-885
[9]
FERMI-LEVEL EFFECTS IN A-SI-H PHOTOCONDUCTIVITY
[J].
PHYSICAL REVIEW B,
1983, 28 (08)
:4570-4578