THE STIMULATED-EMISSION FROM YAG-ND3+ AND KGDW-ND3+ CRYSTALS UNDER SEMICONDUCTOR-LASER PUMPING

被引：0

作者：

DAVYDOV, SV

KULAK, II

MITKOVETS, AI

STAVROV, AA

SHKADAREVICH, AP

YABLONSKII, GP

机构：

来源：

KVANTOVAYA ELEKTRONIKA | 1991年 / 18卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stimulated emission has been obtained for the first time from crystals with narrow absorption bands under the excitation by the radiation from electron-beam-pumped semiconductor CdS(x)Se1-x lasers. The lasting thresholds for YAG:Nd3+ and KGdW:Nd3+ under pumping by the radiation at lambda = 586 nm were equal to approximately 2 and approximately 1 mJ respectively. The efficiency of the pump light conversion into the KGdW:Nd3+ laser radiation amounted to 0.27 %.

引用

页码：20 / 21

页数：2