LONG-RANGE STRUCTURAL AND ELECTRONIC COHERENCE IN AMORPHOUS-SEMICONDUCTORS

被引:21
作者
DIVINCENZO, DP
MOSSERI, R
BRODSKY, MH
SADOC, JF
机构
[1] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19104
[2] CNRS,PHYS SOLIDES LAB,F-92190 MEUDON,FRANCE
[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[4] UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 10期
关键词
D O I
10.1103/PhysRevB.29.5934
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5934 / 5936
页数:3
相关论文
共 25 条
[1]   ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON [J].
ALLAN, DC ;
JOANNOPOULOS, JD ;
POLLARD, WB .
PHYSICAL REVIEW B, 1982, 25 (02) :1065-1080
[2]   QUANTUM WELL MODEL OF HYDROGENATED AMORPHOUS-SILICON [J].
BRODSKY, MH .
SOLID STATE COMMUNICATIONS, 1980, 36 (01) :55-59
[3]   PRESERVATION OF OPTICAL SELECTION-RULES IN AN AMORPHOUS-SEMICONDUCTOR [J].
BRODSKY, MH ;
DIVINCENZO, DP .
PHYSICA B & C, 1983, 117 (MAR) :971-973
[4]   ELECTRONIC CONSEQUENCES OF IDEAL LOCAL ORDER IN AMORPHOUS SI [J].
BRODSKY, MH ;
DIVINCENZO, DP .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :101-104
[5]   MODELING STRUCTURE OF AMORPHOUS TETRAHEDRALLY COORDINATED SEMICONDUCTORS .1. [J].
CONNELL, GAN ;
TEMKIN, RJ .
PHYSICAL REVIEW B, 1974, 9 (12) :5323-5326
[6]  
Coxeter H.S.M., 1973, REGULAR POLYTOPES
[7]  
CYROTLACKMANN F, 1973, J PHYS C SOLID STATE, V6, P3077
[8]   SMALL-ANGLE-SCATTERING EVIDENCE OF VOIDS IN HYDROGENATED AMORPHOUS SILICON [J].
DANTONIO, P ;
KONNERT, JH .
PHYSICAL REVIEW LETTERS, 1979, 43 (16) :1161-1163
[9]   RELAXED CONTINUOUS RANDOM NETWORK MODELS (II) SCATTERING PROPERTIES [J].
GRACZYK, JF ;
CHAUDHARI, P .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 17 (03) :299-318
[10]  
GRACZYK JF, 1979, PHYS STATUS SOLIDI A, V55, P233