LOSS MEASUREMENTS IN GAAS AND AL-XGA-1-XAS DIELECTRIC WAVEGUIDES BETWEEN 1.1 EV AND ENERGY-GAP

被引：36

作者：

MERZ, JL ^{[1
]}

LOGAN, RA ^{[1
]}

SERGENT, AM ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.322805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1436 / 1450

页数：15

共 51 条

[41] CONCENTRATION-DEPENDENCE OF REFRACTIVE-INDEX FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.2 AND 1.8 EV
SELL, DD
CASEY, HC
WECHT, KW
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2650 - 2657
[42] DOUBLE-HETEROSTRUCTURE GAAS DISTRIBUTED-FEEDBACK LASER
SHANK, CV
SCHMIDT, RV
MILLER, BI
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (04) : 200 - 201
[43] Skolnik L. H., 1975, OPTICAL PROPERTIES H, P405
[44] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE
SPITZER, WG
WHELAN, JM
[J]. PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63
[45] STILLMAN GE, 1975, IEEE SOLID STATE DEV
[46] STONE J, COMMUNICATION
[47] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
STURGE, MD
[J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +
[48] TSU R, 1972, 11TH P INT C PHYS SE, V2, P1135
[49] BEHAVIOR OF ELECTRONIC DIELECTRIC CONSTANT IN COVALENT AND IONIC MATERIALS
WEMPLE, SH
DIDOMENI.M
[J]. PHYSICAL REVIEW B, 1971, 3 (04): : 1338 - &
[50] Wright G.B., 1969, LIGHT SCATTERING SPE