KINETICS AND MECHANISM OF POROUS LAYER GROWTH DURING NORMAL-TYPE SILICON ANODIZATION IN HF SOLUTION

被引：33

作者：

PARKHUTIK, VP

GLINENKO, LK

LABUNOV, VA

机构：

来源：

SURFACE TECHNOLOGY | 1983年 / 20卷 / 03期

关键词：

D O I：

10.1016/0376-4583(83)90009-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：265 / 277

页数：13

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