EFFECT OF DOPING PROFILES ON SI/COSI2 PERMEABLE BASE TRANSISTORS

被引：4
作者：
SCHUPPEN, A
VESCAN, L
JEBASINSKI, R
VANDERHART, A
LUTH, H
机构：
[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, KFA, D-5170 Jülich
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 18卷 / 03期
关键词：
PBT; PERMEABLE BASE TRANSISTOR; SI-PBT; SI(111) PBT; SI(100) PBT; SILICON LOW-PRESSURE VAPOR PHASE EPITAXY; LPVPE; HIGH DOSE ION-IMPLANTATION; COBALT ION-IMPLANTATION; COBALTDISILICIDE; COBALTSILICIDE; COSI2 SI/COSI2/SI HETEROSTRUCTURE;
D O I：
10.1016/S0167-9317(05)80007-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Permeable base transistors (PBT) with buried epitaxial CoSi2 Gates have been fabricated by local high-dose cobalt ion-implantation, with subsequent rapid thermal annealing and homoepitaxial overgrowth by low-pressure vapor phase epitaxy. Transistors obtained by Co ion-implantations into low-doped n-type Si (100) as well as Si(111) show typical output characteristics with triode-like and pentode-like regions, depending on doping concentration and applied gate voltage. Pinch-off was observed at zero and at low negative gate voltages, respectively. Breakdown drain-source voltage exceeds 20 V for devices with 0.7 mum gate spacings and finger widths. A transconductance of 80 mS/mm has been obtained with PBTs on a low resistivity substrate, wherein the CoSi2 gate was implanted into an epitaxial Si layer.
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页码：259 / 266
页数：8
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