GAAS/ALAS QUANTUM-WELLS FOR ELECTROABSORPTION MODULATORS

被引：26
作者：
PEZESHKI, B
LORD, SM
BOYKIN, TB
HARRIS, JS
机构：
[1] Solid State Laboratories, Stanford University, Stanford
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期
关键词：
D O I：
10.1063/1.106874
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate both theoretically and experimentally that the quantum-confined Stark effect leads to larger absorption changes in GaAs/AlAs quantum wells compared to the more conventional GaAs/AlGaAs system due to the higher GAMMA-confinement. The lower indirect valleys in AlAs do not degrade the performance and the exciton resonance is maintained at higher-energy shifts. The improvement in exciton oscillator strength is nearly 50% with a 70-meV shift. The greater exciton strength at high fields has important applications for optical modulators and switches that operate at the long-wavelength side of the zero-bias exciton.
引用
收藏
页码：2779 / 2781
页数：3
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