OPTICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE

被引：50
作者：
CLARK, GD
HOLONYAK, N
机构：
来源：
PHYSICAL REVIEW | 1967年 / 156卷 / 03期
关键词：
D O I：
10.1103/PhysRev.156.913
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：913 / +
页数：1
相关论文
共 50 条
  • [31] GALLIUM-PHOSPHIDE GALLIUM-ARSENIDE PHOSPHIDE STRAINED-LAYER SUPERLATTICE ELECTRODES - EFFECT OF THE TERMINATING LAYER ON PHOTOELECTROCHEMICAL PROPERTIES
    ZUHOSKI, SP
    JOHNSON, PB
    ELLIS, AB
    BIEFELD, RM
    GINLEY, DS
    JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (13) : 3961 - 3965
  • [32] Investigation of interaction antimonide, arsenide and phosphide gallium with liquid gallium and tin
    Serebryakva, L.I.
    Denisov, V.M.
    Belousov, O.V.
    Pastukhov, E.A.
    Weidianzixue yu jisuanji, 1998, 15 (06): : 18 - 21
  • [33] OPTICAL-PROPERTIES OF SEMICONDUCTORS - GALLIUM-ARSENIDE
    SHILES, E
    SMITH, DY
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 335 - 335
  • [34] DISORDER AND OPTICAL-PROPERTIES IN GALLIUM-ARSENIDE
    PAPARODITIS, C
    RIDEAU, A
    MONNOM, G
    GAUCHEREL, P
    PHYSICA B & C, 1983, 117 (MAR): : 992 - 994
  • [35] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION BAND TRANSITIONS IN GALLIUM ARSENIDE-GALLIUM PHOSPHIDE ALLOYS
    OSAMURA, K
    MURAKAMI, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (04) : 1063 - &
  • [36] Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires
    Greil, J.
    Assali, S.
    Isono, Y.
    Belabbes, A.
    Bechstedt, F.
    Mackenzie, F. O. Valega
    Silov, A. Yu.
    Bakkers, E. P. A. M.
    Haverkort, J. E. M.
    NANO LETTERS, 2016, 16 (06) : 3703 - 3709
  • [37] POLAROGRAPHIC DETERMINATION OF SULFUR IN GALLIUM ARSENIDE AND PHOSPHIDE POWDERS
    KAPLAN, BY
    SEVASTYA.TN
    INDUSTRIAL LABORATORY, 1969, 35 (05): : 633 - &
  • [38] VECTOR-POLAROGRAPHIC DETERMINATION OF TIN IN GALLIUM, ARSENIC, GALLIUM PHOSPHIDE, AND GALLIUM ARSENIDE
    KAPLAN, BY
    SEVASTYA.TN
    SHIRYAEV.OA
    INDUSTRIAL LABORATORY, 1971, 37 (01): : 16 - &
  • [39] OPTICAL PROPERTIES OF GALLIUM ARSENIDE FILMS DEPOSITED ON SAPPHIRE
    FRENCH, BT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (06) : C197 - &
  • [40] Electrochemical formation and optical properties of porous gallium phosphide
    Zoteev, AV
    Kashkarov, PK
    Obraztsov, AN
    Timoshenko, VY
    SEMICONDUCTORS, 1996, 30 (08) : 775 - 777
12345