IMPROVED HIGH-FREQUENCY MOS CAPACITANCE FORMULA

被引：48

作者：

BREWS, JR ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.1663401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1276 / 1279

页数：4

共 10 条

[1]

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[4]

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[6] SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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[7] SEMICONDUCTOR SURFACE VARACTOR [J].

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[8]

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[9] EXACT ANALYTICAL SOLUTION OF HIGH FREQUENCY LOSSLESS MOS CAPACITANCE-VOLTAGE CHARACTERISTICS AND VALIDITY OF CHARGE ANALYSIS [J].

SAH, CT ;

PIERRET, RF ;

TOLE, AB .

SOLID-STATE ELECTRONICS, 1969, 12 (09) :681-+

[10] EXACT FREQUENCY-DEPENDENT COMPLEX ADMITTANCE OF MOS DIODE INCLUDING SURFACE STATES, SHOCKLEY-READ-HALL (SRH) IMPURITY EFFECTS, AND LOW-TEMPERATURE DOPANT IMPURITY RESPONSE [J].

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SOLID-STATE ELECTRONICS, 1973, 16 (01) :93-113

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