IMPLANTATION AND CHANNELING EFFECTS OF ALKALI ION BEAMS IN SEMICONDUCTORS

被引：8

作者：

MEDVED, DB

PEREL, J

DALEY, HL

ROLIK, GP

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1965年 / 38卷 / DEC期

关键词：

D O I：

10.1016/0029-554X(65)90128-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：175 / &

共 11 条

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[7] PROPERTIES OF SILICON P-N JUNCTIONS FORMED BY CS+ IMPLANTATION AT LOW ENERGIES [J].

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[8]

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[9]

MEDVED DB, 1965, MAR P EL LAS BEAM S, P163

[10] COMPUTER STUDIES OF SLOWING DOWN OF ENERGETIC ATOMS IN CRYSTALS [J].

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