CW PHOTOLUMINESCENCE DETERMINATION OF THERMALLY ACTIVATED FAST X-]GAMMA INTERLAYER ELECTRON-SCATTERING IN TYPE-II GAAS/ALAS SUPERLATTICES

被引：12

作者：

FU, LP ^{[1
]}

BACALZO, FT ^{[1
]}

GILLILAND, GD ^{[1
]}

CHEN, R ^{[1
]}

BAJAJ, KK ^{[1
]}

KLEM, J ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.51.17630

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed dominant type-I photoluminescence from type-II GaAs/AlAs superlattices at temperatures higher than 150 K. The measured type-I to type-II photoluminescence intensity ratio at various temperatures is quantitatively described by a three-level rate-equation model. Our results demonstrate the importance of the X→Γ real-space charge-transfer (RSCT) process, i.e., the interlayer electron scattering from the AlAs X valleys back to the GaAs Γ minimum, which leads to the thermally activated type-I emission in type-II structures. Furthermore, we have determined the temperature dependence of this X→Γ interlayer electron scattering from 2 to 300 K. The X→Γ RSCT time is determined to be about 20 ps at T=300 K. Finally, our results demonstrate that cw PL measurements are useful in determining ultrafast (fs) scattering times. © 1995 The American Physical Society.

引用

页码：17630 / 17634

页数：5

共 16 条

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