Data are presented on the 300 K photopumped (pulsed) laser operation of a visible-spectrum (lambda=650 nm) A1As-A1GaAs/InA1P-LnGaP quantum-well heterostructure (QWH)crystal that utilizes high-index-contrast A1As-native-oxide/A1(0.6)Ga(0.4)As distributed Bragg reflector mirrors. The mirrors are formed by the lateral oxidation (H2O+N-2, 425 degrees C) of two sets of four ''buried'' A1As layers that are separated by A1(0.6)Ga(0.4)As. These mirrors, which create a high-e cavity in the vertical direction, ''sandwich'' a one-wavelength InA1P-InGaP QW active region, thus forming a compact microcavity that ''tunes'' the carrier scattering and recombination into a narrow spectrum (similar to 25 Angstrom) and supports laser operation in the vertical direction. (C) 1995 American Institute of Physics.