OPTICAL-MODEL FOR THE ELLIPSOMETRIC CHARACTERIZATION OF LOW-ENERGY ION-BEAM DAMAGE IN SINGLE-CRYSTAL SILICON

被引：19
作者：
BUCKNER, JL
VITKAVAGE, DJ
IRENE, EA
MAYER, TM
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期
关键词：
D O I：
10.1149/1.2109004
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：1729 / 1733
页数：5
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