FORMATION AND BONDING STRUCTURE OF SILICON-NITRIDE BY 20-KEV N+ ION-IMPLANTATION

被引：37

作者：

HASEGAWA, S ^{[1
]}

ZALM, PC ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.335933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2539 / 2543

页数：5

共 18 条

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