SURFACE ELECTRONIC-PROPERTIES OF ELECTROLYTICALLY HYDROGEN-TERMINATED SI(111)

被引：22
|
作者：
DITTRICH, T
ANGERMANN, H
FLIETNER, H
BITZER, T
LEWERENZ, HJ
机构：
[1] UNIV LIVERPOOL, IRC SURFACE SCI, LIVERPOOL L69 3BX, MERSEYSIDE, ENGLAND
[2] HAHN MEITNER INST BERLIN GMBH, BEREICH PHYS CHEM, D-14109 BERLIN, GERMANY
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 12期
关键词：
D O I：
10.1149/1.2059377
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Measurements of the surface state distribution and of the fixed surface charge of a hydrogen terminated Si(111) surface are reported. The investigations were carried out by the large signal surface photovoltage technique. The electronic properties of the electrolytically prepared n-Si(111) surface are compared after storage in nitrogen and in air and after hot water oxidation. The surface state distribution of the hydrogen-terminated Si(111) surface exposed to N-2 is nearly intrinsic, and the density of states at midgap is 1.7.10(11) eV(-1) cm(-2). The exposure to air induces extrinsic surface states in the midgap region of the distribution.
引用
收藏
页码：3595 / 3599
页数：5
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