TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON

[1] ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 744 - 746

[2] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[3] CHOW TP, 1984, 2ND P S VLSI SCI TEC, P465

[4] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[5] MURARKA SP, 1983, SILICIDES VLSI APPLI

[6] Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329

[7] OSBURN CM, 1982, 1ST P INT S VLSI SCI, P213

[8] PARK HK, 1984, J VAC SCI TECHNOL A, V2, P264, DOI 10.1116/1.572576

[9] RESEVZ P, 1983, J APPL PHYS, V54, P1860

[10] AN OPTIMALLY DESIGNED PROCESS FOR SUBMICROMETER MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 531 - 535

[1] ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 744 - 746

[2] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[3] CHOW TP, 1984, 2ND P S VLSI SCI TEC, P465

[4] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[5] MURARKA SP, 1983, SILICIDES VLSI APPLI

[6] Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329

[7] OSBURN CM, 1982, 1ST P INT S VLSI SCI, P213

[8] PARK HK, 1984, J VAC SCI TECHNOL A, V2, P264, DOI 10.1116/1.572576

[9] RESEVZ P, 1983, J APPL PHYS, V54, P1860

[10] AN OPTIMALLY DESIGNED PROCESS FOR SUBMICROMETER MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 531 - 535